Abstract
Silica-doped (SiO2 = 0 - 1.0 wt%) 3Y-TZP (3 mol % yttria-doped tetragonal zirconia polycrystal) ceramics are prepared from hetero-coagulated aqueous suspension by colloidal processing. Consolidation of the suspension was carried out by pressure filtration at 10 MPa followed by cold isostatic pressing (CIP) at 400 MPa. Consolidated compacts are densified to a relative density over 99% by sintering at 1573 K for 2 h. The formation of glass pockets at grain boundary multiple junctions was observed by SEM for ≥0.5 wt % silica-doped samples. Electrical conductivity measurements were performed to evaluate the modification of grain-boundaries by silica. The apparent grain boundary conductivity decreased with an increase in silica content and became nearly constant above 0.3 wt % of silica, while the bulk conductivity was constant with silica content.
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Uchikoshi, T., Sakka, Y. & Hiraga, K. Effect of Silica Doping on the Electrical Conductivity of 3 mol % Yttria-Stabilized Tetragonal Zirconia Prepared by Colloidal Processing. Journal of Electroceramics 4 (Suppl 1), 113–120 (1999). https://doi.org/10.1023/A:1009919011491
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DOI: https://doi.org/10.1023/A:1009919011491