Abstract
Discrete variational (DV) Xα cluster method has been employed in calculating electronic structures of ZnO. Electronic structures of the bulk and the non-polar surface model clusters are calculated with inclusion of electrostatic potentials in the bulk and near the surface, and the electronic origins of experimental spectra and chemical bonds at the surface are examined in detail. The valence band structure constructed by Zn-3d and O-2p bands is much influenced by electrostatic potentials in ZnO. It is found that the reduction of an electrostatic potential near the surface gives rise to the difference of the valence band structures between in the bulk and at the surface. The calculated density of states at the non-polar surface of ZnO, where the Zn-3d and O-2p bands are more widely separated than in the bulk, is in good agreement with the experimental UPS. In addition, a Zn-O bond at the surface is found to show stronger covalency than that in the bulk, as a result of the change of the valence band structure due to the effect of the electrostatic potential.
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Matsunaga, K., Oba, F., Tanaka, I. et al. Valence Band Structure of ZnO (1010) Surface by Cluster Calculation. Journal of Electroceramics 4 (Suppl 1), 69–80 (1999). https://doi.org/10.1023/A:1009946306948
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DOI: https://doi.org/10.1023/A:1009946306948