Abstract
A fully integrated multi-stage symmetrical structure chargepump and its application to a multi-value voltage-to-voltage converterfor on-chip EEPROM programming are presented. The multi-valuevoltage-to-voltage converter is designed to offer two output voltages,power supply and triple power supply alternatively, which is neededfor a memory array. A dynamic analysis of the multi-stage symmetricalstructure charge pump and an optimization design in terms of circuitarea are also given. The circuit is implemented in a 1.2 μ CMOSprocess and the measurement results show that a voltage pulse as shortas 5 μs with a rise time of 3 μs is obtained. For a 5 V powersupply and with a resistive charge of 100 kΩ, the programmingoutput voltage can reach as high as 11 V and output current forprogramming is over 110 μA, which are high enough to program thememory cell.
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Zhang, M., Llaser, N. & Devos, F. Multi-Value Voltage-to-Voltage Converter Using a Multi-Stage Symmetrical Charge Pump for On-Chip EEPROM Programming. Analog Integrated Circuits and Signal Processing 27, 83–93 (2001). https://doi.org/10.1023/A:1011202806600
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DOI: https://doi.org/10.1023/A:1011202806600