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Threshold simulation of 1.3-μm oxide-confined in-plane quantum-dot (InGa)As/GaAs lasers

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Abstract

In the paper, the self-consistent optical–electrical–thermal-gain model of the oxide-confined long-wavelength 1.3-μm quantum-dot (InGa)As/GaAs diode laser is demonstrated. The model has been applied to analyse room-temperature (RT) threshold-operation characteristics of the advanced laser of this kind. It may be used to describe physics of the above arsenide-based diode lasers to better understand their threshold performance and finally to optimize their structures.

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Authors and Affiliations

  1. Institute of Physics, Technical University of Łódź, ul, Wólczańska 219, 93-005 &, Lstrok;ódź, Poland

    R. P. Sarzała, M. Wasiak, T. Czyszanowski & W. Nakwaski

  2. Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warszawa, Poland

    M. Bugajski

Authors
  1. R. P. Sarzała
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  2. M. Wasiak
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  3. T. Czyszanowski
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  4. M. Bugajski
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  5. W. Nakwaski
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Correspondence to W. Nakwaski.

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Sarzała, R.P., Wasiak, M., Czyszanowski, T. et al. Threshold simulation of 1.3-μm oxide-confined in-plane quantum-dot (InGa)As/GaAs lasers. Optical and Quantum Electronics 35, 675–692 (2003). https://doi.org/10.1023/A:1023977203373

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