Abstract
Thin films of BaTiO3 and SrTiO3 were prepared by a chemical solution deposition method. The impact of the precursor on the processing, on the microstructure, and on the dielectric properties has been studied by systematically varying the alkyl chain length of the used Ba- and Sr-carboxylates. In addition, the effect of stabilizing the Ti-alkoxide precursor by acetylacetone has been investigated. The decomposition process, the crystallization behavior, and the film morphology were analyzed by glancing incidence XRD, reflectance FT-IR and field emission SEM. Distinct precursor effects on the thin film morphology and properties were revealed. Part of this influence can be attributed to an intermediate complex carbonate phase which forms for selected carboxylates with short alkyl chains. The high transformation temperature of this intermediate phase to the perovskite obviously has a marked influence on the crystallization and densification process of the alkaline earth titanate thin films. We correlate the morphological differences of the films to their dielectric properties.
Similar content being viewed by others
References
D. Roy and S.B. Krupanidhi, Appl. Phys. Lett. 62, 1056 (1993).
P.-Y. Lesaicherre, H. Yamaguchi, Y. Miyasaka, H. Watanabe, H. Ono, and M. Yoshida, Integr. Ferroelectrics 8, 201 (1995).
P.C. Van Buskirk, R. Gardiner, and P.S. Kirlia, Mat. Res. Soc. Symp. Proc. 202, 235 (1991).
Y. Shimada, Y. Nagano, E. Fujii, M. Azuma, Y. Uemoto, T. Sumi, Y. Judai, S. Hayashi, N. Moriwaki, J. Nakane, T. Otsuki, C.A. Paz de Araujo, and L.D. McMillan, Integr. Ferroelectrics 11, 229 (1995).
T. Ueda, A. Noma, and D. Ueda, Integr. Ferroelectrics 7, 45 (1995).
J.J. Xu, A.S. Shaikh, and R.W. Vest, IEEE Trans. on Ultrasonics, Ferroelectrics, and Frequency Control 36(3), 307 (1989).
P.C. Joshi and A. Mansingh, Appl. Phys. Lett. 59(27), 3547 (1991).
D. Hennings, M. Klee, and R. Waser, Adv. Materials 3, 334 (1991).
M.H. Fey and D.A. Payne, Appl. Phys. Lett. 63(20), 2753 (1993).
P.C. Joshi and S.B. Krupanidhi, J. Appl. Phys. 73(11), 7627 (1993).
J.F. Scott, M. Azuma, C.A. Paz de Araujo, L.D. McMillan, M.C. Scott, and T. Roberts, Integr. Ferroelectrics 4, 61 (1994).
Y. Fukuda, K. Aoki, K. Numata, and A. Nuishimura, Jpn. J. Appl. Phys. 33(9B), 5255 (1994).
M. Sedlar, M. Sayer, and V. Chivukula, Integr. Ferroelectrics 10, 113 (1995).
M.N. Kamalasanan, N. Deepak Kumar, and S. Chandra, J. Appl. Phys. 76(8), 4603 (1994).
H.S. Gopalakrishnamurthy, M. Subba Rao, and T.R. Narayanan Kutty, J. Inorg. Nucl. Chem. 37, 891 (1975).
D. Hennings, G. Rosenstein, and H. Schreinemacher, J. Europ. Ceram. Soc. 8, 107 (1991).
M. Arima, M. Kakihana, M. Yashima, and M. Yoshimura, Eur. J. Solid State Inorg. Chem. 32, 863 (1995).
C.L. Jia, K. Urban, S. Hoffmann, and R. Waser, J. Mat. Res. (to be published).
A. Seifert, F.F. Lange, and J.S. Speck, J. Mat. Res. 10(13), 680 (1995).
R.W. Schwartz, J.A. Voigt, B.A. Tuttle, D.A. Payne, T.L. Reichert, and R.S. DaSalla, J. Mat. Res. 12, 444 (1997).
S. Doeuff, M. Henry, C. Sanchez, and J. Livage, J. Non-Crys. Solids 89, 206 (1987).
K.H. von Thiele and M. Panse, Z. Anorg. Allg. Chem. 441, 3 (1978).
S. Doeuff, Y. Dromzee, and C. Sanchez, C.R. Acad. Sci. Ser. 2 308, 1409 (1989).
T.J. Boyle and R.W. Schwartz, Comments Inorg. Chem. 16(5), 243 (1994).
C.D. Chandler, C. Roger, and M.J. Hampden-Smith, Chem. Rev. 93, 1205 (1993).
K.C. Pande and R.C. Mehrotra, Z. Anorg. Allg. Chem. 291, 97 (1957).
J. Livage, Proc. Electronic Packaging Materials Science II, Nat. Res. Soc., Pittsburgh, PA, 1986, p. 323.
A. Yamamoto and S. Kambara, J. Am. Chem. Soc. 74, 4344 (1957).
M. Sedlar and M. Sayer, J. Sol-Gel. Science Technol. 5, 27 (1995).
C. Sanchez, F. Babonneau, S. Doeuff, and A. Leaustic, Ultrastructure Processing of Advanced Ceramics, edited by J.D. Mackenzie and D.R. Ulrich (John Wiley & Sons, New York, 1988).
F. Babonneau, A. Leaustic, and J. Livage, Mat. Res. Soc. Proc. 121, 317 (1990).
R.W. Schwartz, J.A. Voigt, C.D. Buchheit, and T.J. Boyle, Ceram. Transactions 43, 145 (1994).
R. Waser, Integr. Ferroelectrics 15, 39 (1997).
T. Hayashi, N. Oji, and H. Maiwa, Jpn. J. Appl. Phys. 33(9B), 5277 (1994).
G. Arlt, D. Hennings, and G. de With, J. Appl. Phys. 58, 1619 (1985).
S. Hoffmann, M. Klee, and R. Waser, Integr. Ferroelectrics 10, 155 (1995).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Hasenkox, U., Hoffmann, S. & Waser, R. Influence of Precursor Chemistry on the Formation of MTiO3 (M = Ba, Sr) Ceramic Thin Films. Journal of Sol-Gel Science and Technology 12, 67–79 (1998). https://doi.org/10.1023/A:1026480027046
Issue Date:
DOI: https://doi.org/10.1023/A:1026480027046