Abstract
An experiment is reported on anisotropic etching in a CF4–O2plasma produced by high-voltage gas discharge. The process is applied to SiO2and is also effected on SiC, Si, C (diamond), and As2S3. It is shown that the etch rate is mainly dependent on the oxygen percentage, plasma parameters, and the wafer temperature. It is established that etch rate is maximal at oxygen percentages of 0.8–1.5%, discharge currents of 80–140 mA, and wafer temperatures of 390–440 K. The etching is found to be uniform within 1%.
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Kazanskii, N.L., Kolpakov, V.A. & Kolpakov, A.I. Anisotropic Etching of SiO2 in High-Voltage Gas-Discharge Plasmas. Russian Microelectronics 33, 169–182 (2004). https://doi.org/10.1023/B:RUMI.0000026175.29416.eb
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DOI: https://doi.org/10.1023/B:RUMI.0000026175.29416.eb