Abstract
Chemical functionalization of low-dimensional materials such as nanotubes, nanowires and graphene leads to profound changes in their properties and is essential for solubilizing them in common solvents. Covalent attachment of functional groups is generally achieved at defect sites, which facilitate electron transfer. Here, we describe a simple and general method for covalent functionalization of two-dimensional transition metal dichalcogenide nanosheets (MoS2, WS2 and MoSe2), which does not rely on defect engineering. The functionalization reaction is instead facilitated by electron transfer between the electron-rich metallic 1T phase and an organohalide reactant, resulting in functional groups that are covalently attached to the chalcogen atoms of the transition metal dichalcogenide. The attachment of functional groups leads to dramatic changes in the optoelectronic properties of the material. For example, we show that it renders the metallic 1T phase semiconducting, and gives it strong and tunable photoluminescence and gate modulation in field-effect transistors.
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Acknowledgements
M. Chhowalla, D.V. and R.K. acknowledge financial support from the National Science Foundation Division of Graduate Education (NSF DGE) 0903661. T.A. and A.G. acknowledge financial assistance from the NSF (CAREER Chemistry-1004218, DMR-0968937, NanoEHS-1134289, NSF-Analytical Chemistry Instrumentation Facility and a Special Creativity Grant). C.S. acknowledges the Conselho Nacional de Desenvolvimento Científico e Tecnológico-Brazil, for a fellowship. T.F. acknowledges partial support from Japan Science and Technology Agency-PRESTO (‘New Materials Science and Element Strategy’) and Japan Society for Promotion of Science (Grant-in-Aid for Scientific Research on Innovative Areas ‘Science of Atomic Layers’, 90363382). The authors thank G.S. Hall for ATR-FTIR measurements. G. Recine at New York University Polytechnic is thanked for computing time.
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M. Chhowalla conceived the idea and designed the experiments. D.V. conceived the idea and designed the experiments with M. Chhowalla, functionalized the TMDs, characterized them with Raman, TGA, UV-vis and XPS analysis. M. Chhowalla and D.V. analysed the data and wrote the manuscript. R.K. fabricated the field-effect transistors and helped C.S. with FET measurements. C.S. measured FET performance. D.K. performed first-principles calculations of the atomic structure of functionalized MoS2. T.F. and M. Chen performed the STEM work. A.G. carried out the 13C NMR, XRD and FTIR experiments. A.G. and T.A. discussed the results with M. Chhowalla and D.V.
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Voiry, D., Goswami, A., Kappera, R. et al. Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering. Nature Chem 7, 45–49 (2015). https://doi.org/10.1038/nchem.2108
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DOI: https://doi.org/10.1038/nchem.2108
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