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A dressed spin qubit in silicon

Nature Nanotechnology volume 12, pages 61–66 (2017)Cite this article

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Abstract

Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties—a different and easily tunable level splitting, faster control and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and assess its potential as a quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, frequency modulation of the driving field or a simple detuning pulse. We measure coherence times of and , one order of magnitude longer than those of the undressed spin. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.

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Figure 1: Sample design and energy level diagram.
Figure 2: Dressing the electron spin.
Figure 3: Dressed qubit control.
Figure 4: Dressed qubit lifetime and coherence times.

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Acknowledgements

This research was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (project number CE110001027) and the US Army Research Office (W911NF-13-1-0024). We acknowledge support from the Australian National Fabrication Facility and from the laboratory of R. Elliman at the Australian National University for the ion-implantation facilities. The work at Keio was supported by the Japanese Society for the Promotion of Science JSPS KAKEN (S) and the Core-to-Core Program.

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Authors and Affiliations

  1. Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, 2052, New South Wales, Australia

    Arne Laucht, Rachpon Kalra, Stephanie Simmons, Juan P. Dehollain, Juha T. Muhonen, Fahd A. Mohiyaddin, Solomon Freer, Fay E. Hudson, Andrew S. Dzurak & A. Morello

  2. School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kanagawa, 223-8522, Japan

    Kohei M. Itoh

  3. Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, 3010, Victoria, Australia

    David N. Jamieson & Jeffrey C. McCallum

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  1. Arne Laucht
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Contributions

A.L., R.K., S.S., J.P.D., J.T.M., A.S.D. and A.M. designed the experiments. A.L. performed the measurements and analysed the results with A.M.'s supervision and R.K.'s and S.S.'s assistance. A.L. and F.A.M. performed the simulations with A.M.'s supervision. D.N.J. and J.C.M. designed and performed the 31P implantation experiments. F.E.H. fabricated the device with A.S.D.'s supervision and R.K.'s and S.F.'s assistance. K.M.I. prepared and supplied the 28Si epilayer wafer. A.L. and A.M. wrote the manuscript, with input from all the co-authors.

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Correspondence to Arne Laucht or A. Morello.

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Laucht, A., Kalra, R., Simmons, S. et al. A dressed spin qubit in silicon. Nature Nanotech 12, 61–66 (2017). https://doi.org/10.1038/nnano.2016.178

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