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How to report and benchmark emerging field-effect transistors

Nature Electronics volume 5, pages 416–423 (2022)Cite this article

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An Author Correction to this article was published on 24 August 2022

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Abstract

The use of organic, oxide and low-dimensional materials in field-effect transistors has now been studied for decades. However, properly reporting and comparing device performance remains challenging due to the interdependency of multiple device parameters. The interdisciplinarity of this research community has also led to a lack of consistent reporting and benchmarking guidelines. Here we propose guidelines for reporting and benchmarking key field-effect transistor parameters and performance metrics. We provide an example of this reporting and benchmarking process using a two-dimensional semiconductor field-effect transistor. Our guidelines should help promote an improved approach for assessing device performance in emerging field-effect transistors, helping the field to progress in a more consistent and meaningful way.

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Fig. 1: Basic device structure and electrical characteristics.
Fig. 2: Example of reporting device performance for monolayer Au-contacted MoS2 FETs.
Fig. 3: Example benchmarking device performance of monolayer MoS2 FETs.

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The data used in this paper are available from the corresponding authors upon reasonable request.

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References

  1. Chen, Z. et al. An integrated logic circuit assembled on a single carbon nanotube. Science 311, 1735 (2006).

    Article  Google Scholar 

  2. Franklin, A. D. et al. Sub-10-nm carbon nanotube transistor. Nano Lett. 12, 758–762 (2012).

    Article  Google Scholar 

  3. Geim, A. K. Graphene: status and prospects. Science 324, 1530–1534 (2009).

    Article  Google Scholar 

  4. Ye, P. D. et al. Phosphorene an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014).

    Article  Google Scholar 

  5. Tao, L. et al. Silicene field-effect transistors operating at room temperature. Nat. Nanotechnol. 10, 227–231 (2015).

    Article  Google Scholar 

  6. Wang, Y. et al. Field-effect transistors made from solution-grown two-dimensional tellurene. Nat. Electron. 1, 228–236 (2018).

    Article  Google Scholar 

  7. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).

    Article  Google Scholar 

  8. Das, S., Chen, H. Y., Penumatcha, A. V. & Appenzeller, J. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 13, 100–105 (2013).

    Article  Google Scholar 

  9. English, C. D., Shine, G., Dorgan, V. E., Saraswat, K. C. & Pop, E. Improved contacts to MoS2 transistors by ultra-high vacuum metal deposition. Nano Lett. 16, 3824–3830 (2016).

    Article  Google Scholar 

  10. Sirringhaus, H. 25th anniversary article: organic field-effect transistors: the path beyond amorphous silicon. Adv. Mater. 26, 1319–1335 (2014).

    Article  Google Scholar 

  11. Waldrip, M., Jurchescu, O. D., Gundlach, D. J. & Bittle, E. G. Contact resistance in organic field-effect transistors: conquering the barrier. Adv. Funct. Mater. 30, 1904576 (2020).

    Article  Google Scholar 

  12. Li, S. et al. Nanometre-thin indium tin oxide for advanced high-performance electronics. Nat. Mater. 18, 1091–1097 (2019).

    Article  Google Scholar 

  13. Li, M. Y., Su, S. K., Wong, H. S. P. & Li, L. J. How 2D semiconductors could extend Moore’s law. Nature 567, 169–170 (2019).

    Article  Google Scholar 

  14. Datye, I. M. et al. Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements. 2D Mater. 6, 011004 (2019).

    Article  Google Scholar 

  15. Streetman, B. G. & Banerjee, S. K. Solid State Electronic Devices 6th edn (Pearson, 2006).

  16. Smithe, K. K. H., English, C. D., Suryavanshi, S. V. & Pop, E. High-field transport and velocity saturation in synthetic monolayer MoS2. Nano Lett. 18, 4516–4522 (2018).

    Article  Google Scholar 

  17. Pinckney, N. et al. Impact of FinFET on near-threshold voltage scalability. IEEE Des. Test 34, 31–38 (2017).

    Article  Google Scholar 

  18. Ortiz-Conde, A. et al. A review of recent MOSFET threshold voltage extraction methods. Microelectron. Reliab. 42, 583–596 (2002).

    Article  Google Scholar 

  19. Ghibaudo, G. New method for the extraction of MOSFET parameters. Electron. Lett. 24, 543–545 (1988).

    Article  Google Scholar 

  20. Chang, H. Y., Zhu, W. & Akinwande, D. On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals. Appl. Phys. Lett. 104, 113504 (2014).

    Article  Google Scholar 

  21. Pang, C. et al. Mobility extraction in 2D transition metal dichalcogenide devices—avoiding contact resistance implicated overestimation. Small 17, 2100940 (2021).

    Article  Google Scholar 

  22. Schroder, D. K. Semiconductor Material and Device Characterization 3rd edn (Wiley, 2015).

  23. Mleczko, M. J. et al. HfSe2 and ZrSe2: two-dimensional semiconductors with native high-k oxides. Sci. Adv. 3, e1700481 (2017).

    Article  Google Scholar 

  24. Nasr, J. R., Schulman, D. S., Sebastian, A., Horn, M. W. & Das, S. Mobility deception in nanoscale transistors: an untold contact story. Adv. Mater. 31, 1806020 (2019).

    Article  Google Scholar 

  25. Bittle, E. G., Basham, J. I., Jackson, T. N., Jurchescu, O. D. & Gundlach, D. J. Mobility overestimation due to gated contacts in organic field-effect transistors. Nat. Commun. 7, 10908 (2016).

    Article  Google Scholar 

  26. Smithe, K. K. H., English, C. D., Suryavanshi, S. V. & Pop, E. Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices. 2D Mater. 4, 011009 (2017).

    Article  Google Scholar 

  27. Franklin, A. D. Nanomaterials in transistors: from high-performance to thin-film applications. Science 349, aab2750 (2015).

    Article  Google Scholar 

  28. Das, S. et al. Transistors based on two-dimensional materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021).

    Article  Google Scholar 

  29. Pao, H. C. & Sah, C. T. Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors. Solid State Electron. 9, 927–937 (1966).

    Article  Google Scholar 

  30. John, D. L., Castro, L. C. & Pulfrey, D. L. Quantum capacitance in nanoscale device modeling. J. Appl. Phys. 96, 5180 (2004).

    Article  Google Scholar 

  31. Xu, H., Zhang, Z. & Peng, L.-M. Measurements and microscopic model of quantum capacitance in graphene. Appl. Phys. Lett. 98, 133122 (2011).

    Article  Google Scholar 

  32. Appenzeller, J., Zhang, F., Das, S. & Knoch, J. in 2D Materials for Nanoelectronics (eds Houssa, M. et al.) 207–240 (CRC Press, 2016).

  33. Arutchelvan, G. et al. From the metal to the channel: a study of carrier injection through the metal/2D MoS2 interface. Nanoscale 9, 10869–10879 (2017).

    Article  Google Scholar 

  34. Prakash, A., Ilatikhameneh, H., Wu, P. & Appenzeller, J. Understanding contact gating in Schottky barrier transistors from 2D channels. Sci. Rep. 7, 12596 (2017).

    Article  Google Scholar 

  35. Illarionov, Y. Y. et al. Improved hysteresis and reliability of MoS2 transistors with high-quality CVD growth and Al2O3 encapsulation. IEEE Electron Device Lett. 38, 1763–1766 (2017).

    Article  Google Scholar 

  36. IEEE International Roadmap for Devices and Systems (IEEE, 2020); https://irds.ieee.org/

  37. Patel, K. A., Grady, R. W., Smithe, K. K. H., Pop, E. & Sordan, R. Ultra-scaled MoS2 transistors and circuits fabricated without nanolithography. 2D Mater. 7, 015018 (2020).

    Article  Google Scholar 

  38. Shen, P.-C. et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211–217 (2021).

    Article  Google Scholar 

  39. Ahmed, Z. et al. Introducing 2D-FETs in device scaling roadmap using DTCO. In Proc. 2020 International Electron Devices Meeting, IEDM 22.5.1–22.5.4 (IEEE, 2020); https://doi.org/10.1109/IEDM13553.2020.9371906

  40. Chou, A. S. et al. High on-state current in chemical vapor deposited monolayer MoS2 nFETs with Sn ohmic contacts. IEEE Electron Device Lett. 42, 272–275 (2021).

    Article  Google Scholar 

  41. Sebastian, A., Pendurthi, R., Choudhury, T. H., Redwing, J. M. & Das, S. Benchmarking monolayer MoS2 and WS2 field-effect transistors. Nat. Commun. 12, 693 (2021).

    Article  Google Scholar 

  42. Kumar, A., Tang, A., Philip Wong, H. S. & Saraswat, K. Improved contacts to synthetic monolayer MoS2—a statistical study. In Proc. IEEE International Interconnect Technology Conference 1–3 (IEEE, 2021); https://doi.org/10.1109/IITC51362.2021.9537515

  43. Cheng, Z., Price, K. & Franklin, A. D. Contacting and gating 2-D nanomaterials. IEEE Trans. Electron Devices 65, 4073–4083 (2018).

    Article  Google Scholar 

  44. Illarionov, Y. Y. et al. Insulators for 2D nanoelectronics: the gap to bridge. Nat. Commun. 11, 3385 (2020).

    Article  Google Scholar 

  45. Cheng, Z. et al. Are 2D interfaces really flat? ACS Nano 16, 5316–5324 (2022).

    Article  Google Scholar 

  46. Zhou, J. et al. A library of atomically thin metal chalcogenides. Nature 556, 355–359 (2018).

    Article  Google Scholar 

  47. Liu, Y. et al. Van der Waals heterostructures and devices. Nat. Rev. Mater. 1, 16042 (2016).

    Article  Google Scholar 

  48. Uchida, K., Koga, J. & Takagi, S. Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 102, 074510 (2007).

    Article  Google Scholar 

  49. Haratipour, N., Namgung, S., Oh, S. H. & Koester, S. J. Fundamental limits on the subthreshold slope in Schottky source/drain black phosphorus field-effect transistors. ACS Nano 10, 3791–3800 (2016).

    Article  Google Scholar 

  50. Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).

    Article  Google Scholar 

  51. Nikonov, D. E. & Young, I. A. Benchmarking of beyond-CMOS exploratory devices for logic integrated circuits. IEEE J. Explor. Solid State Comput. Devices Circuits 1, 3–11 (2015).

    Article  Google Scholar 

  52. Abuzaid, H., Williams, N. X. & Franklin, A. D. How good are 2D transistors? An application-specific benchmarking study. Appl. Phys. Lett. 118, 030501 (2021).

    Article  Google Scholar 

  53. Lemme, M. C., Akinwande, D., Huyghebaert, C. & Stampfer, C. 2D materials for future heterogeneous electronics. Nat. Commun. 13, 1392 (2022).

    Article  Google Scholar 

  54. McClellan, C. J., Yalon, E., Smithe, K. K. H., Suryavanshi, S. V. & Pop, E. High current density in monolayer MoS2 doped by AlOx. ACS Nano 15, 1587–1596 (2021).

    Article  Google Scholar 

  55. Lembke, D. & Kis, A. Breakdown of high-performance monolayer MoS2 transistors. ACS Nano 6, 10070–10075 (2012).

    Article  Google Scholar 

  56. Kumar, A. et al. Sub-200 Ω µm alloyed contacts to synthetic monolayer MoS2. In Proc. IEEE International Electron Devices Meeting (IEDM) 154–157 (IEEE, 2021).

  57. Chou, A. et al. Antimony semimetal contact with enhanced thermal stability for high performance 2D electronics. In Proc. IEEE International Electron Devices Meeting (IEDM) 150–153 (IEEE, 2021).

  58. Wang, Y. et al. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Nature 568, 70–74 (2019).

    Article  Google Scholar 

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Acknowledgements

We acknowledge H. Zhang and A. Davydov from the National Institute of Standards and Technology for their help with the TEM images of the oxide in Fig. 2. We acknowledge G. Li and L. Cao from North Carolina State University for providing the chemical-vapour-deposited MoS2 film. This work is supported by NEWLIMITS, a centre in nCORE, a Semiconductor Research Corporation (SRC) programme sponsored by NIST through award no. 70NANB17H041. A.D.F. acknowledges support from the National Science Foundation under grant no. ECCS 1915814. M.C.L. acknowledges funding from the European Union’s Horizon 2020 research and innovation programme under grant agreements nos. 881603 (Graphene Flagship), 952792 (2D-EPL) and 829035 (QUEFORMAL), as well as the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through grants nos. LE 2440/7-1 and LE 2440/8-1. Furthermore, support by the Bundesministerium für Bildung und Forschung (BMBF, German Ministry of Education and Research) through grants nos. 03XP0210 (GIMMIK) and 03ZU1106 (NeuroSys) is acknowledged. L.-M.P. acknowledges the National Science Foundation of China under grant no. 61888102. S.J.K. acknowledges support from the NSF through award no. DMR-1921629. Fabrication and measurements were partially performed at the NIST Center for Nanoscale Science and Technology and at Duke Shared Manufacturing and Instrument Facility (SMIF). Certain commercial equipment, instruments, or materials are identified in this paper to specify the experimental procedure adequately. Such identifications are not intended to imply recommendation or endorsement by the National Institute of Standards and Technology (NIST), nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose.

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Authors and Affiliations

  1. Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD, USA

    Zhihui Cheng, Son T. Le & Curt A. Richter

  2. Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA

    Zhihui Cheng, Chin-Sheng Pang, Zhihong Chen & Joerg Appenzeller

  3. Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA

    Peiqi Wang & Xiangfeng Duan

  4. Theiss Research, La Jolla, CA, USA

    Son T. Le

  5. School of Integrated Circuits, Peking University, Beijing, China

    Yanqing Wu

  6. Electrical and Computer Engineering, New York University, Brooklyn, NY, USA

    Davood Shahrjerdi

  7. Center for Quantum Phenomena, Physics Department, New York University, New York, NY, USA

    Davood Shahrjerdi

  8. IMEC, Leuven, Belgium

    Iuliana Radu

  9. RWTH Aachen University, Chair of Electronic Devices, Aachen, Germany

    Max C. Lemme

  10. AMO GmbH, Advanced Microelectronic Center Aachen, Aachen, Germany

    Max C. Lemme

  11. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing, China

    Lian-Mao Peng

  12. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA

    Steven J. Koester

  13. Department of Electrical Engineering, Stanford University, Stanford, CA, USA

    Eric Pop

  14. Department of Electrical and Computer Engineering, Duke University, Durham, NC, USA

    Aaron D. Franklin

  15. Department of Chemistry, Duke University, Durham, NC, USA

    Aaron D. Franklin

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  1. Zhihui Cheng
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Correspondence to Zhihui Cheng, Aaron D. Franklin or Curt A. Richter.

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Nature Electronics thanks Han Wang and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.

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Supplementary Note 1: Rigorously reporting and benchmarking Imax/Imin. Supplementary Note 2: Different methods to extract threshold voltage VT and its uncertainties. Supplementary Note 3: Extracting Rc from TLM. Supplementary Note 4: Additional parameters. Supplementary Note 5: Demonstration of device spread and parameter variations. Supplementary Note 6: Benchmarking devices with different channel thicknesses.

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Cheng, Z., Pang, CS., Wang, P. et al. How to report and benchmark emerging field-effect transistors. Nat Electron 5, 416–423 (2022). https://doi.org/10.1038/s41928-022-00798-8

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