Issue 20, 2009
From the journal:

Journal of Materials Chemistry

Inkjet printed high-mobility indium zinc tin oxide thin film transistors

Doo-Hyoung Lee,ab   Seung-Yeol Han,a   Gregory S. Hermanc  and  Chih-hung Chang*a  

* Corresponding authors

a Department of Chemical Engineering, Oregon State University, Corvallis, OR 97330, USA
E-mail: changch@engr.orst.edu

b School of Display and Chemical engineering, Yeungnam University, Kyongsan 214-1, South Korea

c Hewlett-Packard Co., Corvallis, OR 97330, USA

Abstract

Thin-film transistors based on inkjet printed indium zinc tin oxide (IZTO) channel layers are reported in this paper. The printed IZTO transistor has a high field-effect mobility (µFE = ∼30 cm2V−1 s−1), excellent on-to-off current ratio (>1 × 106) and behaves as an enhancement mode device (turn-on voltage = 2 V). This mobility is an order magnitude higher than previously reported for inkjet printed oxide-based transistors. The printed films are highly transparent in the UV-Visible regime with a transmittance higher than 95%. A transparent thin film transistor using a printed IZTO channel was also demonstrated for the first time.

Graphical abstract: Inkjet printed high-mobility indium zinc tin oxide thin film transistors

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Article information

DOI
https://doi.org/10.1039/B822893K
Article type
Communication
Submitted
19 Dec 2008
Accepted
07 Apr 2009
First published
17 Apr 2009

J. Mater. Chem., 2009,19, 3135-3137

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Inkjet printed high-mobility indium zinc tin oxide thin film transistors

D. Lee, S. Han, G. S. Herman and C. Chang, J. Mater. Chem., 2009, 19, 3135 DOI: 10.1039/B822893K

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