Issue 1, 2010
From the journal:

CrystEngComm

Preparation, structure and properties of Mn-doped ZnO rod arrays

Dianwu Wu,a   Zhongbing Huang,*a   Guangfu Yin,a   Yadong Yao,a   Xiaoming Liao,a   Dong Han,b   Xia Huangb  and  Jianwen Gu*c  

* Corresponding authors

a College of Materials Science and Engineering, Sichuan University, Chengdu, China
E-mail: zbhuang@iccas.ac.cn.
Fax: +86-28-85413003
Tel: +86-28-85413003

b Zhengzhou Research Institute, Aluminum Corporation of China Limited, Zhengzhou, China

c The Military General Hospital of Chengdu PLA, Chengdu, China
E-mail: gujianwen5000@yahoo.com.cn
Tel: +86-28-86570362, 86570361

Abstract

Mn-doped ZnO rod arrays were successfully prepared on zinc substrate by a simple aqueous solution method. X-Ray diffraction and high resolution transmission electron microscopy results indicate the doped Mn2+ has successfully incorporated into the ZnO crystal lattice. The optical, magnetic and electrical properties of as-prepared ZnO rod arrays were all changed due to Mn2+ doping into ZnO rods. Photoluminescence spectra at room temperature suggest that the band gap increases with increasing the Mn concentrations in ZnO rods. The M–H curves of all Mn-doped ZnO rod arrays show obvious ferromagnetic characteristics at room temperature. The current–voltage characteristic curves of Mn-doped ZnO rod arrays indicate that the samples are typical semiconductors.

Graphical abstract: Preparation, structure and properties of Mn-doped ZnO rod arrays

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Article information

DOI
https://doi.org/10.1039/B909780E
Article type
Paper
Submitted
18 May 2009
Accepted
15 Aug 2009
First published
28 Aug 2009

CrystEngComm, 2010,12, 192-198

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Preparation, structure and properties of Mn-doped ZnO rod arrays

D. Wu, Z. Huang, G. Yin, Y. Yao, X. Liao, D. Han, X. Huang and J. Gu, CrystEngComm, 2010, 12, 192 DOI: 10.1039/B909780E

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