Issue 10, 2011

A selective etching phenomenon on {001} faceted anatase titanium dioxide single crystal surfaces by hydrofluoric acid

Abstract

A selective etching phenomenon on {001} faceted anatase TiO2 single crystal surfaces by HF and associated etching mechanism are reported. Density functional theory (DFT) calculations reveal that HF stabilizes the grown {001} facets at low concentrations, but selectively destroys the grown {001} facets at high concentrations.

Graphical abstract: A selective etching phenomenon on {001} faceted anatase titanium dioxide single crystal surfaces by hydrofluoric acid

Supplementary files

Article information

Article type
Communication
Submitted
08 Nov 2010
Accepted
17 Dec 2010
First published
14 Jan 2011

Chem. Commun., 2011,47, 2829-2831

A selective etching phenomenon on {001} faceted anatase titanium dioxide single crystal surfaces by hydrofluoric acid

Y. Wang, H. Zhang, Y. Han, P. Liu, X. Yao and H. Zhao, Chem. Commun., 2011, 47, 2829 DOI: 10.1039/C0CC04848H

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