Issue 8, 2013
From the journal:

Nanoscale

Temperature tuned defect induced magnetism in reduced graphene oxide

Geetika Khurana,*a   Nitu Kumar,bc   R. K. Kotnala,b   Tashi Nautiyald  and  R. S. Katiyara  

* Corresponding authors

a Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931-3343, USA
E-mail: geetkhurana84@gmail.com
Fax: +1-787-764-2571
Tel: +1-939-216-0968

b National Physical Laboratory, Dr K.S. Krishnan Marg, New Delhi 110012, India

c Department of Physics, National Institute of Technology, Kurukshetra 136119, India

d Department of Physics, Indian Institute of Technology, Roorkee 247667, India

Abstract

The existence of ferromagnetism in the wonder material graphene has opened up the path for many future spintronics and memory applications. But simultaneously it is very important to understand the variation of these properties with temperature in regards to the device applications. Here we observed defect induced ferromagnetism in chemically reduced graphene and the effect of temperature on it. Several theoretical studies have proved that the main cause of ferromagnetism in graphene is due to various defects. The observed results established that these defects can be mended by treating the samples at elevated temperatures but sacrificing the ferromagnetism simultaneously. Hence, temperature plays a crucial role in controlling the magnetism as well as the defects in graphene. In this study we revealed that at 600 °C the self-repair mechanism helps the defects to mend but resulting in the decrement of magnetization and providing a good quality graphene with less defects.

Graphical abstract: Temperature tuned defect induced magnetism in reduced graphene oxide

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Article information

DOI
https://doi.org/10.1039/C3NR34291C
Article type
Paper
Submitted
26 Dec 2012
Accepted
08 Feb 2013
First published
12 Feb 2013

Nanoscale, 2013,5, 3346-3351

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Temperature tuned defect induced magnetism in reduced graphene oxide

G. Khurana, N. Kumar, R. K. Kotnala, T. Nautiyal and R. S. Katiyar, Nanoscale, 2013, 5, 3346 DOI: 10.1039/C3NR34291C

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