Issue 11, 2015
From the journal:

Nanoscale

Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse†

Xuming Xieab  and  Guozhen Shen*b  

* Corresponding authors

a Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

b State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
E-mail: gzshen@semi.ac.cn

Abstract

With a band gap of 2.28 eV, In2S3 is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In2S3 nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In2S3 nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high Ion/Ioff ratio up to 106 and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 104 A W−1 and 2.28 × 107%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In2S3 nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices.

Graphical abstract: Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse

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Supplementary files

Article information

DOI
https://doi.org/10.1039/C5NR00410A
Article type
Paper
Submitted
20 Jan 2015
Accepted
09 Feb 2015
First published
10 Feb 2015

Nanoscale, 2015,7, 5046-5052

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Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse

X. Xie and G. Shen, Nanoscale, 2015, 7, 5046 DOI: 10.1039/C5NR00410A

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