Issue 38, 2015

Sensitive photo-thermal response of graphene oxide for mid-infrared detection

Abstract

This study characterizes the effects of incident infrared (IR) radiation on the electrical conductivity of graphene oxide (GO) and examines its potential for mid-IR detection. Analysis of the mildly reduced GO (m-GO) transport mechanism near room temperature reveals variable range hopping (VRH) for the conduction of electrons. This VRH behavior causes the m-GO resistance to exhibit a strong temperature dependence, with a large negative temperature coefficient of resistance of approximately −2 to −4% K−1. In addition to this hopping transport, the presence of various oxygen-related functional groups within GO enhances the absorption of IR radiation significantly. These two GO material properties are synergically coupled and provoke a remarkable photothermal effect within this material; specifically, a large resistance drop is exhibited by m-GO in response to the increase in temperature caused by the IR absorption. The m-GO bolometer effect identified in this study is different from that exhibited in vanadium oxides, which require added gold-black films that function as IR absorbers owing to their limited IR absorption capability.

Graphical abstract: Sensitive photo-thermal response of graphene oxide for mid-infrared detection

Supplementary files

Article information

Article type
Paper
Submitted
18 Jun 2015
Accepted
18 Aug 2015
First published
25 Aug 2015

Nanoscale, 2015,7, 15695-15700

Sensitive photo-thermal response of graphene oxide for mid-infrared detection

J. J. Bae, J. H. Yoon, S. Jeong, B. H. Moon, J. T. Han, H. J. Jeong, G. Lee, H. R. Hwang, Y. H. Lee, S. Y. Jeong and S. C. Lim, Nanoscale, 2015, 7, 15695 DOI: 10.1039/C5NR04039F

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