Issue 127, 2015
From the journal:

RSC Advances

Epitaxial growth of nonpolar m-plane ZnO epilayers and ZnO/Zn0.55Mg0.45O multiple quantum wells on a LiGaO2 (100) substrate

T. Yan,ac   C.-Y. J. Lu,a   L. Chang,*a   M. M. C. Chou,a   K. H. Ploog,a   C.-M. Chiangb  and  Ning Yec  

* Corresponding authors

a Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, Republic of China
E-mail: lwchang@mail.nsysu.edu.tw

b Department of Chemistry, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, Republic of China

c Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, P. R. China

Abstract

Nonpolar m-plane ZnO epilayers and 5-period ZnO/Zn1−xMgxO (x = 0.45) multiple quantum wells (QWs) have been grown successfully on a LiGaO2 (100) substrate by plasma-assisted molecular beam epitaxy. The epilayer and QWs samples show different anisotropy of the X-ray rocking curves (RCs) and the surface stripes. The former exhibits a low FWHM value of 126 arcsec of the X-ray (10[1 with combining macron]0) RC along [11[2 with combining macron]0]ZnO, and its surface is composed of fine stripes along [0001]ZnO. The QW sample, in contrast, exhibits a low RC FWHM (169 arcsec) along [0001]ZnO with surface stripes oriented along [11[2 with combining macron]0]ZnO. These phenomena are attributed to an anisotropic stress relaxation. Moreover, combining the X-ray and TEM characterization techniques, both samples show an extremely low density of threading dislocations of less than 1 × 108 cm−2, but a high density of basal stacking faults of 1 × 106 cm−1. The room temperature cathodoluminescence spectrum of the ZnO/Zn1−xMgxO QWs shows a strong emission peak with an apparent blue shift to 3.56 eV, indicating the positive quantum confinement effect and hence the absence of induced polarization fields.

Graphical abstract: Epitaxial growth of nonpolar m-plane ZnO epilayers and ZnO/Zn0.55Mg0.45O multiple quantum wells on a LiGaO2 (100) substrate

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Article information

DOI
https://doi.org/10.1039/C5RA20431C
Article type
Paper
Submitted
02 Oct 2015
Accepted
03 Dec 2015
First published
07 Dec 2015

RSC Adv., 2015,5, 104798-104805

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Epitaxial growth of nonpolar m-plane ZnO epilayers and ZnO/Zn0.55Mg0.45O multiple quantum wells on a LiGaO2 (100) substrate

T. Yan, C.-Y. J. Lu, L. Chang, M. M. C. Chou, K. H. Ploog, C.-M. Chiang and N. Ye, RSC Adv., 2015, 5, 104798 DOI: 10.1039/C5RA20431C

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