Issue 45, 2015

Resistive switching in Ga- and Sb-doped ZnO single nanowire devices

Abstract

Resistive random access memory (RRAM) is one of the most promising nonvolatile memory technologies because of its high potential to replace traditional charge-based memory, which is approaching its scaling limit. To fully realize the potential of the RRAM, it can be important to develop a unique device with current self-rectification, which provides a solution to suppress sneak current in crossbar arrays, and self-compliance, which eliminates the current limiter. In this paper, self-rectifying resistive switching is demonstrated in Ga-doped ZnO single nanowire devices; the current is not only self-rectifying but also self-compliance for Sb-doped single nanowire devices. Multilevel resistive switching has also been achieved for Sb-doped ZnO single nanowire devices by using different SET voltages. Furthermore, the doping of Ga and Sb narrows the switching voltage distribution greatly.

Graphical abstract: Resistive switching in Ga- and Sb-doped ZnO single nanowire devices

Article information

Article type
Paper
Submitted
13 Jul 2015
Accepted
22 Oct 2015
First published
23 Oct 2015

J. Mater. Chem. C, 2015,3, 11881-11885

Author version available

Resistive switching in Ga- and Sb-doped ZnO single nanowire devices

B. Wang, T. Ren, S. Chen, B. Zhang, R. Zhang, J. Qi, S. Chu, J. Huang and J. Liu, J. Mater. Chem. C, 2015, 3, 11881 DOI: 10.1039/C5TC02102B

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