Issue 13, 2018, Issue in Progress
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RSC Advances

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

Dun-Bao Ruan,a   Po-Tsun Liu, ORCID logo *b   Yu-Chuan Chiu,b   Po-Yi Kuo,b   Min-Chin Yu,b   Kai-jhih Gan,a   Ta-Chun Chienb  and  Simon M. Szea  

* Corresponding authors

a Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

b Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
E-mail: ptliu@mail.nctu.edu.tw
Tel: +886-3-5712121-52994

Abstract

This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was observed and attributed to the generation of donor-like oxygen vacancies at the backchannel, which is induced by the oxygen desorption and Gibbs free energy of the BPL material. The mechanism was well studied by XPS analysis. On the other hand, a HfO2 gate insulator was applied for the InWZnO TFT device to control the extremely conductive channel and adjust the negative threshold voltage. With both a HfO2 gate insulator and a suitable BPL, the InWZnO TFT device exhibits good electrical characteristics and a remarkable lifetime when exposed to the ambient air.

Graphical abstract: Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

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Article information

DOI
https://doi.org/10.1039/C7RA13193C
Article type
Paper
Submitted
10 Dec 2017
Accepted
05 Feb 2018
First published
12 Feb 2018
This article is Open Access
Creative Commons BY license

RSC Adv., 2018,8, 6925-6930

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Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

D. Ruan, P. Liu, Y. Chiu, P. Kuo, M. Yu, K. Gan, T. Chien and Simon M. Sze, RSC Adv., 2018, 8, 6925 DOI: 10.1039/C7RA13193C

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