Water assisted atomic layer deposition of yttrium oxide using tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) yttrium(III): process development, film characterization and functional properties

Lukas Mai; Nils Boysen; Ersoy Subaşı; Teresa de los Arcos; Detlef Rogalla; Guido Grundmeier; Claudia Bock; Hong-Liang Lu; Anjana Devi

doi:10.1039/C7RA13417G

Water assisted atomic layer deposition of yttrium oxide using tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) yttrium(iii): process development, film characterization and functional properties†

Lukas Mai,

‡^a Nils Boysen,

‡^a Ersoy Subaşı,

^b Teresa de los Arcos,

^c Detlef Rogalla,

^d Guido Grundmeier,^c Claudia Bock,

^e Hong-Liang Lu

^f and Anjana Devi

*^a

Author affiliations

* Corresponding authors

^a Inorganic Materials Chemistry, Ruhr-University Bochum, 44801 Bochum, Germany
E-mail: anjana.devi@rub.de

^b Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, 44801 Bochum, Germany

^c Macromolecular and Technical Chemistry, University of Paderborn, 33098 Paderborn, Germany

^d RUBION, Ruhr-University Bochum, 44801 Bochum, Germany

^e Mikrosystemtechnik, Ruhr-Universität Bochum, 44801 Bochum, Germany

^f Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433, China

Abstract

We report a new atomic layer deposition (ALD) process for yttrium oxide (Y₂O₃) thin films using tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) yttrium(III) [Y(DPDMG)₃] which possesses an optimal reactivity towards water that enabled the growth of high quality thin films. Saturative behavior of the precursor and a constant growth rate of 1.1 Å per cycle confirm the characteristic self-limiting ALD growth in a temperature range from 175 °C to 250 °C. The polycrystalline films in the cubic phase are uniform and smooth with a root mean squared (RMS) roughness of 0.55 nm, while the O/Y ratio of 2.0 reveal oxygen rich layers with low carbon contaminations of around 2 at%. Optical properties determined via UV/Vis measurements revealed the direct optical band gap of 5.56 eV. The valuable intrinsic properties such as a high dielectric constant make Y₂O₃ a promising candidate in microelectronic applications. Thus the electrical characteristics of the ALD grown layers embedded in a metal insulator semiconductor (MIS) capacitor structure were determined which resulted in a dielectric permittivity of 11, low leakage current density (≈10⁻⁷ A cm⁻² at 2 MV cm⁻¹) and high electrical breakdown fields (4.0–7.5 MV cm⁻¹). These promising results demonstrate the potential of the new and simple Y₂O₃ ALD process for gate oxide applications.

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Water assisted atomic layer deposition of yttrium oxide using tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) yttrium(iii): process development, film characterization and functional properties†

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Water assisted atomic layer deposition of yttrium oxide using tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) yttrium(III): process development, film characterization and functional properties

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