A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction

Zhenping Wu; Lei Jiao; Xiaolong Wang; Daoyou Guo; Wenhao Li; Linghong Li; Feng Huang; Weihua Tang

doi:10.1039/C7TC01741C

A self-powered deep-ultraviolet photodetector based on an epitaxial Ga₂O₃/Ga:ZnO heterojunction

Zhenping Wu,

*^a Lei Jiao,^a Xiaolong Wang,

^a Daoyou Guo,^a Wenhao Li,^a Linghong Li,^b Feng Huang

^c and Weihua Tang*^a

Author affiliations

* Corresponding authors

^a State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
E-mail: zhenpingwu@bupt.edu.cn, whtang@bupt.edu.cn

^b Department of Physics, The State University of New York at Potsdam, Potsdam, New York 13676-2294, USA

^c State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510085, P. R. China

Abstract

A deep-ultraviolet photodetector (DUV PD) which can function independently of an external power supply is urgently desired for the next-generation photodetection applications from the viewpoint of being diminutive, convenient, and power saving. In this work, by introducing a lattice compatible semiconductor Ga:ZnO, a high quality β-Ga₂O₃/Ga:ZnO heterojunction based DUV PD is achieved using laser molecular beam epitaxy. The obtained device could operate in a self-powered mode with an excellent wavelength selectivity, a high ON/OFF ratio, a high DUV/visible rejection ratio, and a high stability under 254 nm light illumination. The physical mechanism responsible for the observation is discussed based on the photogenerated electron–hole pairs separated in the depletion region under the built-in electric field. Our work may provide a new insight into further high performance self-sufficient DUV PD applications.

Article information

https://doi.org/10.1039/C7TC01741C

Article type

Communication

Submitted

21 Apr 2017

Accepted

25 Jun 2017

First published

26 Jun 2017

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J. Mater. Chem. C, 2017,5, 8688-8693

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A self-powered deep-ultraviolet photodetector based on an epitaxial Ga₂O₃/Ga:ZnO heterojunction

Z. Wu, L. Jiao, X. Wang, D. Guo, W. Li, L. Li, F. Huang and W. Tang, J. Mater. Chem. C, 2017, 5, 8688 DOI: 10.1039/C7TC01741C

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Journal of Materials Chemistry C

A self-powered deep-ultraviolet photodetector based on an epitaxial Ga₂O₃/Ga:ZnO heterojunction

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A self-powered deep-ultraviolet photodetector based on an epitaxial Ga₂O₃/Ga:ZnO heterojunction

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