Controlling the gate dielectric properties of vinyl-addition polynorbornene copolymers via thiol–ene click chemistry for organic field-effect transistors†
Abstract
A simple way to control the gate dielectric properties of vinyl-addition polynorbornene copolymers bearing pendant vinyl groups (P(NB/VNB)) through thiol–ene click chemistry is reported. The optimized content ratio of tetra-thiol cross-linkers leads to the enhanced gate dielectric properties and performance of organic field-effect transistors. Also, this approach provides photo-patternability, low-temperature solution-processing, and air-processability.
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