Temperature stable Sm(Nb1−xVx)O4 (0.0 ≤ x ≤ 0.9) microwave dielectric ceramics with ultra-low dielectric loss for dielectric resonator antenna applications

Fang-Fang Wu; Di Zhou; Chao Du; Shi-Kuan Sun; Li-Xia Pang; Biao-Bing Jin; Ze-Ming Qi; Jobin Varghese; Qiang Li; Xiu-Qun Zhang

doi:10.1039/D1TC02390J

Temperature stable Sm(Nb_1−xV_x)O₄ (0.0 ≤ x ≤ 0.9) microwave dielectric ceramics with ultra-low dielectric loss for dielectric resonator antenna applications†

Fang-Fang Wu,^a Di Zhou,

*^a Chao Du,^a Shi-Kuan Sun,^b Li-Xia Pang,^c Biao-Bing Jin,^d Ze-Ming Qi,

^e Jobin Varghese,^f Qiang Li^g and Xiu-Qun Zhang^h

Author affiliations

* Corresponding authors

^a Key Laboratory of Multifunctional Materials and Structures, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi'an 710049, Shaanxi, China
E-mail: zhoudi1220@gmail.com

^b School of Material Science and Energy Engineering, Foshan University, Foshan, Guangdong, P. R. China

^c Micro-optoelectronic Systems Laboratories, Xi’an Technological University, Xi’an 710032, Shaanxi, China

^d Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu, China

^e National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China

^f Hybrid Microsystems, Fraunhofer Institute for Ceramic Technology and Systems IKTS, Winterbergstr 28, 01277 Dresden, Germany

^g ZTE Corporation, District Nanshan, Shenzhen, China

^h ZTE Corporation, District Yuhuatai, Nanjing, China

Abstract

Herein, the structure and dielectric properties of Sm(Nb_1−xV_x)O₄ (SNV-x) (0.0 ≤ x ≤ 0.9) ceramics were studied by crystal structure refinement, Raman, transmission electron microscope (TEM), far-infrared/THz reflectivity spectroscopy and microwave dielectric tests. Three kinds of ultra-low dielectric loss and temperature-stable Sm(Nb_1−xV_x)O₄ (0.2 ≤ x ≤ 0.4) ceramics with permittivities of 18.01–16.89, Q × f values of 97 800–75 200 GHz (@∼8.6 GHz), and TCF of −5.6 (x = 0.2), to +2.3 ppm °C⁻¹ (x = 0.3), then −6.3 (x = 0.4) ppm °C⁻¹ were synthesized in this system. It was found that V⁵⁺ substitution can reliably induce the phase transition of monoclinic fergusonite (M-fergusonite, I2/a) to tetragonal zircon phase (T-zircon, I4₁/amd) (x ≈ 0.3), while effectively reducing the phase transition temperature. TEM shows that there were two different orientation domain structures in the M-fergusonite phase, and the widths of the two domain structures get closer with an increase in B-site substitution. Moreover, the variations in permittivity (ε_r), quality factor (Q × f), and the temperature coefficient of resonance frequency (TCF) were strongly related to the crystal distortion and phase transition. Notably, a rectangular dielectric resonator antenna (RDRA) was fabricated with an Sm(Nb_0.8V_0.2)O₄ (SNV-0.2) specimen. The antenna resonated at 27.04 GHz and had a bandwidth of ∼820 MHz (S11 < −10 dB). This system is a good candidate for 5G and future millimeter-wave applications.

Journal of Materials Chemistry C

Temperature stable Sm(Nb_1−xV_x)O₄ (0.0 ≤ x ≤ 0.9) microwave dielectric ceramics with ultra-low dielectric loss for dielectric resonator antenna applications†

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Temperature stable Sm(Nb_1−xV_x)O₄ (0.0 ≤ x ≤ 0.9) microwave dielectric ceramics with ultra-low dielectric loss for dielectric resonator antenna applications

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Journal of Materials Chemistry C