Issue 3, 1992
From the journal:

Journal of Materials Chemistry

New precursor for growing nitride films

Michael C. Flowers,   Neville B. H. Jonathan,   Angus B. Laurie,   Alan Morris  and  Gregory J. Parker  

Abstract

The reaction of hydrazoic acid, HN3, with trimethylgallium to produce thin-film gallium nitride under very-low-pressure chemical vapour deposition (VLPCVD) conditions is described. Data are presented which show that at 10–6 mbar the product GaN is crystalline and strongly oriented on the substrate sapphire (0001) crystal face. Some potential advantages of using HN3 rather than the conventional precursor NH3, for nitride film production, are mentioned.

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Article information

DOI
https://doi.org/10.1039/JM9920200365
Article type
Paper

J. Mater. Chem., 1992,2, 365-366

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New precursor for growing nitride films

M. C. Flowers, N. B. H. Jonathan, A. B. Laurie, A. Morris and G. J. Parker, J. Mater. Chem., 1992, 2, 365 DOI: 10.1039/JM9920200365

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