Issue 24, 2011

Doping of a dielectric layer as a new alternative for increasing sensitivity of the contactless conductivity detection in microchips

Abstract

This communication describes a new procedure to increase the sensitivity of C4D in PDMS/glass microchips. The method consists in doping the insulating layer (PDMS) over the electrodes with nanoparticles of TiO2, increasing thus its dielectric constant. The experimental protocol is simple, inexpensive, and fast.

Graphical abstract: Doping of a dielectric layer as a new alternative for increasing sensitivity of the contactless conductivity detection in microchips

Supplementary files

Article information

Article type
Communication
Submitted
12 Aug 2011
Accepted
11 Oct 2011
First published
01 Nov 2011

Lab Chip, 2011,11, 4148-4151

Doping of a dielectric layer as a new alternative for increasing sensitivity of the contactless conductivity detection in microchips

R. S. Lima, T. P. Segato, A. L. Gobbi, W. K. Tomazelli Coltro and E. Carrilho, Lab Chip, 2011, 11, 4148 DOI: 10.1039/C1LC20757A

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