Issue 7, 2011
From the journal:

Nanoscale

Field nanoemitter: One-dimension Al4C3 ceramics

Y. Sun,a   H. Cui,ab   L. Gong,c   Jian Chen,c   P. K. Shenab  and  C. X. Wang*ab  

* Corresponding authors

a State key laboratory of optoelectronic materials and technologies, School of Physics Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, People's Republic of China
E-mail: wchengx@mail.sysu.edu.cn

b The Key Laboratory of Low-carbon Chemistry & Energy Conservation of Guangdong Province, Sun Yat-sen (Zhongshan) University, Guangzhou, People's Republic of China

c Instrumental Analysis & Research Center, Sun Yat-sen (Zhongshan) University, Guangzhou, People's Republic of China

Abstract

As a kind of ionic (or salt-like) carbide, Al4C3 hardly any active functions have been found except for structure material purposes. However, considering the unique characteristic features of its crystal structure, we think Al4C3 in fact might have huge potential for exhibiting active functionality on field-emission application. Herein, we report for the first time the catalyst-free synthesis and excellent field emission properties of Al4C3 one-dimension (1-D) nanostructures. The 1-D nanostructures acting as cold electron emitters display excellent field emission performance with the turn-on field as low as 1.4–2.0 V μm−1 and the threshold field down to 4.2–4.4 V μm−1. Such emitters are technologically useful, because they can be easily fabricated on large substrates, and the synthesis process is simple and broadly applicable. The findings conceptually provide new opportunities for the application of Al4C3 ceramic material in vacuum microelectronic devices.

Graphical abstract: Field nanoemitter: One-dimension Al4C3 ceramics

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Article information

DOI
https://doi.org/10.1039/C1NR10194C
Article type
Paper
Submitted
22 Feb 2011
Accepted
05 May 2011
First published
20 Jun 2011

Nanoscale, 2011,3, 2978-2982

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Field nanoemitter: One-dimension Al4C3 ceramics

Y. Sun, H. Cui, L. Gong, J. Chen, P. K. Shen and C. X. Wang, Nanoscale, 2011, 3, 2978 DOI: 10.1039/C1NR10194C

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