Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio

Mehrdad Shaygan; Keivan Davami; Bo Jin; Thomas Gemming; Jeong-Soo Lee; M. Meyyappan

doi:10.1039/C5TC03999A

Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio

Mehrdad Shaygan,*^a Keivan Davami,^bc Bo Jin,^d Thomas Gemming,^e Jeong-Soo Lee^d and M. Meyyappan^f

* Corresponding authors

^a Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal straße 25, 52074 Aachen, Germany
E-mail: shaygan@amo.de

^b Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, PA 19104, USA

^c Department of Mechanical Engineering, Widener University, One University Place, Chester, PA 19013, USA

^d Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea

^e IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany

^f NASA Ames Research Center, Moffett Field, CA 94035, USA

Abstract

The fabrication and characterization of a field effect transistor using a radial core/shell structure based on ZnTe nanowires is reported here. The electronic and photoconductive performance of the devices is successfully controlled by tuning the shell to core ratios in the integrated devices. The ZnO shell around the ZnTe nanowire has a significant effect on the optical properties of the transistor, and the photo-to-dark current ratio, responsivity and photoconductive gain are greatly enhanced to 199, 196 and 8.12 × 10⁴% respectively for the 17.5% shell/core ratio. The ability to control the core/shell ratio presented here is promising in device design for optoelectronic applications for covering a wide range of wavelengths.

Article information

https://doi.org/10.1039/C5TC03999A

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Paper

Submitted

27 Nov 2015

Accepted

08 Feb 2016

First published

08 Feb 2016

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J. Mater. Chem. C, 2016,4, 2040-2046

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Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio

M. Shaygan, K. Davami, B. Jin, T. Gemming, J. Lee and M. Meyyappan, J. Mater. Chem. C, 2016, 4, 2040 DOI: 10.1039/C5TC03999A

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Journal of Materials Chemistry C

Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio

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Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio

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