Issue 40, 2021

Dimensionality-driven metal–insulator transition in spin–orbit-coupled IrO2

Abstract

A metal–insulator transition is observed in spin–orbit-coupled IrO2 thin films upon reduction of the film thickness. In the epitaxially grown samples, the critical thickness (t ∼ 1.5–2.2 nm) is found to depend on growth orientation (001), (100) or (110). Interestingly from the applied point of view, the insulating behavior is found even in polycrystalline ultrathin films. By analyzing the experimental electrical response with various theoretical models, we find good fits to the Efros–Shklovskii-VRH and the Arrhenius-type behaviors, which suggests an important role of electron correlations in determining the electrical properties of IrO2. Our magnetic measurements also point to a significant role of magnetic order. Altogether, our results would point to a mixed Slater- and Mott-type of insulator.

Graphical abstract: Dimensionality-driven metal–insulator transition in spin–orbit-coupled IrO2

Supplementary files

Article information

Article type
Paper
Submitted
29 Jun 2021
Accepted
15 Sep 2021
First published
04 Oct 2021
This article is Open Access
Creative Commons BY-NC license

Nanoscale, 2021,13, 17125-17135

Dimensionality-driven metal–insulator transition in spin–orbit-coupled IrO2

E. Arias-Egido, M. A. Laguna-Marco, C. Piquer, P. Jiménez-Cavero, I. Lucas, L. Morellón, F. Gallego, A. Rivera-Calzada, M. Cabero-Piris, J. Santamaria, G. Fabbris, D. Haskel, R. Boada and S. Díaz-Moreno, Nanoscale, 2021, 13, 17125 DOI: 10.1039/D1NR04207F

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