Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

Huaxin Yi; Churong Ma; Wan Wang; Huanrong Liang; Rui Cui; Weiwei Cao; Hailin Yang; Yuhang Ma; Wenjing Huang; Zhaoqiang Zheng; Yichao Zou; Zexiang Deng; Jiandong Yao; Guowei Yang

doi:10.1039/D3MH00733B

Quantum tailoring for polarization-discriminating Bi₂S₃ nanowire photodetectors and their multiplexing optical communication and imaging applications†

Huaxin Yi,‡^ab Churong Ma,

‡^c Wan Wang,^a Huanrong Liang,^a Rui Cui,^a Weiwei Cao,

^a Hailin Yang,^a Yuhang Ma,^a Wenjing Huang,^d Zhaoqiang Zheng,

^d Yichao Zou,

^a Zexiang Deng,

*^e Jiandong Yao

*^ab and Guowei Yang

^ab

Author affiliations

* Corresponding authors

^a State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
E-mail: yaojd3@mail.sysu.edu.cn

^b Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China

^c Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou 511443, Guangdong, P. R. China

^d School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China

^e School of Science, Guilin University of Aerospace Technology, Guilin 541004, Guangxi, P. R. China
E-mail: dengzex@mail2.sysu.edu.cn

Abstract

In this study, cost-efficient atmospheric pressure chemical vapor deposition has been successfully developed to produce well-aligned high-quality monocrystalline Bi₂S₃ nanowires. By virtue of surface strain-induced energy band reconstruction, the Bi₂S₃ photodetectors demonstrate a broadband photoresponse across 370.6 to 1310 nm. Upon a gate voltage of 30 V, the responsivity, external quantum efficiency, and detectivity reach 23 760 A W⁻¹, 5.55 × 10⁶%, and 3.68 × 10¹³ Jones, respectively. The outstanding photosensitivity is ascribed to the high-efficiency spacial separation of photocarriers, enabled by synergy of the axial built-in electric field and type-II band alignment, as well as the pronounced photogating effect. Moreover, a polarization-discriminating photoresponse has been unveiled. For the first time, the correlation between quantum confinement and dichroic ratio is systematically explored. The optoelectronic dichroism is established to be negatively correlated with the cross dimension (i.e., width and height) of the channel. Specifically, upon 405 nm illumination, the optimized dichroic ratio reaches 2.4, the highest value among the reported Bi₂S₃ photodetectors. In the end, proof-of-concept multiplexing optical communications and broadband lensless polarimetric imaging have been implemented by exploiting the Bi₂S₃ nanowire photodetectors as light-sensing functional units. This study develops a quantum tailoring strategy for tailoring the polarization properties of (quasi-)1D material photodetectors whilst depicting new horizons for the next-generation opto-electronics industry.

Materials Horizons

Quantum tailoring for polarization-discriminating Bi₂S₃ nanowire photodetectors and their multiplexing optical communication and imaging applications†

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Quantum tailoring for polarization-discriminating Bi₂S₃ nanowire photodetectors and their multiplexing optical communication and imaging applications

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