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40 GHz active mode-locking in a 1.5 µm monolithic extended-cavity laser

40 GHz active mode-locking in a 1.5 µm monolithic extended-cavity laser

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© The Institution of Electrical Engineers
Published

We report active mode locking in a monolithic long-cavity semiconductor laser, operating at 1.5 µm wavelength. Pulses with durations of 4 ps at repetition rates up to 40 GHz have been achieved, with a modulation depth of 97%. This is the first report of active mode locking in a monolithic device, and the highest repetition rate achieved with an actively mode locked laser.

Inspec keywords: laser mode locking; semiconductor junction lasers

Other keywords: semiconductor laser; 40 GHz; 1.5 micron; repetition rates; monolithic extended-cavity laser; active mode-locking; modulation depth

Subjects: Semiconductor lasers; Lasing action in semiconductors; Laser beam modulation, pulsing and switching; mode locking and tuning

References

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      • Koren, U., Koch, T.L., Miller, B.I., Shahar, A.: `Processes for large scale photonic integrated circuits', Topical Meeting on Integrated and Guided-Wave Optics, 1989, Houston, Texas, p. 68–71, Technical Digest.
    2. 2)
      • K.Y. Lau , A. Yariv . Direct modulation and active mode locking of ultrahigh speed GaAlAs lasers at frequencies up to 18 GHz. Appl. Phys. Lett. , 326 - 328
    3. 3)
      • G. Eisenstein , R.S. Tucker , U. Koren , S.K. Korotky . Active mode-locking characteristics of InGaAsP-single mode fibre composite cavity laser. IEEE J. Quantum Electron. , 142 - 148
    4. 4)
      • S.W. Corzine , J.E. Bowers , G. Przybylek , U. Koren , B.I. Miller , C.E. Soccolich . Actively mode-locked GaInAsP laser with subpicosecond output. Appl. Phys. Lett. , 348 - 350
    5. 5)
      • L.A. Glasser . A linearized theory for the diode laser in an external cavity. IEEE J. Quantum Electron. , 525 - 531
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