Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1
Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1
- Author(s): M. Whitehead ; A. Rivers ; G. Parry ; J.S. Roberts ; C. Button
- DOI: 10.1049/el:19890658
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- Author(s): M. Whitehead 1 ; A. Rivers 1 ; G. Parry 1 ; J.S. Roberts 2 ; C. Button 2
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View affiliations
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Affiliations:
1: Department of Electronic & Electrical Engineering, University College London, London, UK
2: Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield, UK
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Affiliations:
1: Department of Electronic & Electrical Engineering, University College London, London, UK
- Source:
Volume 25, Issue 15,
20 July 1989,
p.
984 – 985
DOI: 10.1049/el:19890658 , Print ISSN 0013-5194, Online ISSN 1350-911X
We report the demonstration of a high-contrast (> 100:1), low-voltage multiple quantum well reflection modulator. The performance is achieved by using resonantly-enhanced electroabsorption in GaAs quantum wells embedded in the spacer region of an asymmetric Fabry-Pérot cavity, which is at the same time a pin diode. Optimum contrast is observed at ≃860nm with only 9 V bias and ≈3.5dB insertion loss.
Inspec keywords: optical modulation; semiconductor quantum wells; III-V semiconductors; gallium arsenide
Other keywords:
Subjects: Semiconductor junctions; Electro-optical devices; Modulation and coding methods; II-VI and III-V semiconductors
References
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