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Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes

Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes

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© The Institution of Electrical Engineers
Published

Room-tempeTature continuous and pulsed lasing of verticalcavity, single-quantum-well, surface-emitting microlasers is achieved at μ983nm. The active Ga0.8In0.2As single quantum well is 100 Å thick. These microlasers have the smallest gain medium volumes among lasers ever built. The entire laser structure is grown by molecular beam epitaxy and the microlasers are formed by chemically assisted ionbeam etching. The microlasers are 3–50μm across. The minimum threshold currents are 1.1 mA (pulsed) and l.5mA(CW).

Inspec keywords: semiconductor quantum wells; sputter etching; semiconductor junction lasers; gallium arsenide; indium compounds; semiconductor epitaxial layers; molecular beam epitaxial growth; III-V semiconductors

Other keywords: surface-emitting microlasers; 1.1 mA; CW; 1.5 mA; 100 Å; smallest gain medium volumes; chemically assisted ion-beam etching; 983 nm; vertical-cavity single-quantum-well microlaser diodes; Ga0.8In0.2As; minimum threshold currents; pulsed lasing; molecular beam epitaxy

Subjects: Vacuum deposition; II-VI and III-V semiconductors; Lasing action in semiconductors; Design of specific laser systems; Semiconductor lasers; Epitaxial growth

References

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      • T. Sakayuchi , F. Koyama , K. Iga . Vertical cavity surface-emitting laser with an AlGaAs/AlAs Bragg reflector. Electron. Lett. , 928 - 929
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      • J.L. Jewell , A. Scherer , S.L. McCall , Y.H. Lee , S.J. Walker , J.P. Harbison , L.T. Florez . Low-threshold electrically pumped vertical-cavity surface-emitting microlasers. Electron. Lett. , 1123 - 1124
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      • A. Ibaraki , K. Kawashima , K. Furushawa , T. Ishikawa , T. Yamaguchi , T. Niina . Buried heterostructure GaAs/GaAlAs distributed Bragg reflector surfaceemitting laser with very low threshold (5.2 mA) under roomtemperature CW conditions. Jpn. J. Appl. Phys. , L667 - L668
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      • Botez, D., Zinkiewcz, L.M., Roth, T.J., Mawst, L.L., Peterson, G.: `Low-threshold-current-density vertical-cavity surface emitting AlGaAs/GaAs diode lasers', Paper FC2, Technical Digest of Conference on Laser and Electro-Optics, 1989, Baltimore, p. 380.
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      • Jewell, J.L., Huang, K.F., Tai, K., Lee, Y.H., Fischer, R.J., McCall, S.L., Cho, A.Y.: `Vertical cavity single quantum well laser', Paper PD 14-1, Technical digest CLEO '89, 31 July 1989, Baltimore, Maryland, optical society of America.
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      • R.J. Fisher , K. Tai , K.F. Huang , D. Deppe , A.Y. Cho . Extremely low current threshold in vertical cavity surface emitting laser diodes by use of hybrid reflectors. Appl. Phys. Lett.
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