Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Quantum-barrier-varactor diodes for high-efficiency millimetre-wave multipliers

Quantum-barrier-varactor diodes for high-efficiency millimetre-wave multipliers

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A new device, the quantum-barrier-varactor diode (QBV diode), is proposed for use in multipliers for millimetre waves. Since the capacitance/voltage characteristic is symmetric, only odd harmonics are obtained. Hence there is no idler circuit to consider for the tripler and only one for the quintupler. It is shown that for triplers and quintuplers, the theoretical efficiency using QBVs is comparable or possibly larger than using Schottky varactor diodes.

References

    1. 1)
      • M.V. Scheneider . Metal-semiconductor junctions as frequency converters. infrared & Millim. Waves
    2. 2)
      • D. Vakhshoori , S. Wang . Resonant tunneling diodes with AlAs barrier: guides for improving room-temperature operation. J. Appl. Phys. , 3474 - 3476
    3. 3)
      • Tolmunen, T.J.: `High efficiency Schottky-varactor frequency multipliers at millimeter waves', 1989, Dr. Tech. thesis, Helsinki University of Technology, Report S 180, partly published in Int. J. Infrared & Millim. Waves, 1987, 8, pp. 1313–1353 and 1989, 9, pp. 475–518.
    4. 4)
      • I. Hase , H. Kawai , K. Kaneko , N. Watanabe . Electron transport through the MOCVD grown GaAs/AlGaAs/GaAs heterojunction barrier. Electron. Lett. , 491 - 492
    5. 5)
      • I. Song , D.-S. Pan . Analysis and simulation of quantum well injection transit time diode. IEEE Trans. , 2315 - 2322
    6. 6)
      • C.H. Page . Harmonic generators with ideal rectifiers. Proc. IRE , 1738 - 1741
    7. 7)
      • Siegel, P.H., Kerr, A.R., Hwang, W.: `Topics in the optimization of millimeter-wave mixers', paper 2287, NASA tech, 1984.
    8. 8)
      • Zirath, H.: `On the high-frequency behaviour of ohmic contacts', Proc. 19th European solid state device research conf. ESSDERC '89, 1989, Berlin, p. 63–66.
    9. 9)
      • Grönqvist, H., Rydberg, A., Hjelmgren, H., Zirath, H., Kollberg, E., Söderström, J., Andersson, T.: `A millimeter wave quantum well diode oscillator', Proc. European microwave conf., 1988, p. 370–375.
    10. 10)
      • P. Penfield , R.P. Rafuse . (1962) Varactor applications, Varactor applications.
    11. 11)
      • A. Rydberg , H. Grönquist . Quantum-well high-efficiency millimetre-wave frequency tripler. Electron. Lett. , 348 - 349
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19891134
Loading

Related content

content/journals/10.1049/el_19891134
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address