GaInAsN/GaAs laser diodes operating at 1.52 µm
GaInAsN/GaAs laser diodes operating at 1.52 µm
- Author(s): M. Fischer ; M. Reinhardt ; A. Forchel
- DOI: 10.1049/el:20000870
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- Author(s): M. Fischer 1 ; M. Reinhardt 2 ; A. Forchel 1
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View affiliations
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Affiliations:
1: Technische Physik, University of Würzburg, Würzburg, Germany
2: Nanosystems and Technologies, Nanoplus GmbH, Würzburg, Germany
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Affiliations:
1: Technische Physik, University of Würzburg, Würzburg, Germany
- Source:
Volume 36, Issue 14,
6 July 2000,
p.
1208 – 1209
DOI: 10.1049/el:20000870 , Print ISSN 0013-5194, Online ISSN 1350-911X
GaInAsN/GaAs double quantum well (DQW) lasers have been grown by solid source molecular beam epitaxy (MBE). Room-temperature pulsed operation is demonstrated for a ridge waveguide laser diode at a wavelength of 1517 nm. This is the first report of room-temperature laser emission in the 1.5 µm range based on GaAs.
Inspec keywords: molecular beam epitaxial growth; waveguide lasers; optical fabrication; III-V semiconductors; quantum well lasers; indium compounds; gallium arsenide; gallium compounds; ridge waveguides; laser beams
Other keywords:
Subjects: Semiconductor lasers; Laser beam modulation, pulsing and switching; mode locking and tuning; Vacuum deposition; Design of specific laser systems; Laser beam characteristics and interactions; Vacuum deposition; Laser beam modulation, pulsing and switching; mode locking and tuning; Optical waveguides; Lasing action in semiconductors; Optical waveguides and couplers; Optical fabrication, surface grinding
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