1.53 µm GaInNAsSb laser diodes grown on GaAs(100)
1.53 µm GaInNAsSb laser diodes grown on GaAs(100)
- Author(s): J.A. Gupta ; P.J. Barrios ; X. Zhang ; G. Pakulski ; X. Wu
- DOI: 10.1049/el:20057623
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- Author(s): J.A. Gupta 1 ; P.J. Barrios 1 ; X. Zhang 1 ; G. Pakulski 1 ; X. Wu 1
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View affiliations
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Affiliations:
1: Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada
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Affiliations:
1: Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada
- Source:
Volume 41, Issue 2,
20 January 2005,
p.
71 – 72
DOI: 10.1049/el:20057623 , Print ISSN 0013-5194, Online ISSN 1350-911X
GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm−2 per quantum well in pulsed mode, with characteristic temperatures as high as 90 K.
Inspec keywords: molecular beam epitaxial growth; quantum well lasers; waveguide lasers; leakage currents; ridge waveguides; III-V semiconductors; gallium compounds; current density; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; gallium arsenide; indium compounds
Other keywords:
Subjects: Waveguides and microwave transmission lines; Vacuum deposition; Lasing action in semiconductors; Semiconductor lasers; Low-dimensional structures: growth, structure and nonelectronic properties; Vacuum deposition
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