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CCD structures implemented in standard 0.18 μm CMOS technology

CCD structures implemented in standard 0.18 μm CMOS technology

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A novel concept of implementing charge-coupled devices (CCDs) in a 0.18 µm CMOS technology is developed. This structure is targeted towards large pixels for medical applications. No major process modifications are necessary for implementing this structure.

References

    1. 1)
      • A. Theuwissen . (1995) Solid-state imaging with charge-coupled devices.
    2. 2)
      • Rao, P.R.: `Degradation of spectral response and dark current of CMOS image sensors in deep-submicron technology due to gamma-irradiation', ESSDERC 2007, Munich, Germany.
    3. 3)
      • Kleinfelder, S.: `Novel integrated CMOS pixel structures for vertex detectors', Nuclear Science Symp., 2003, Portland, OR, USA, p. 335–339.
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