Memristive devices are promising components for nanoelectronics with applications in nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing. Bipolar resistive switches based on metal oxides such as have been identified as memristive devices primarily based on the “pinched hysteresis loop” that is observed in their current-voltage characteristics. Here we show that the mathematical definition of a memristive device provides the framework for understanding the physical processes involved in bipolar switching and also yields formulas that can be used to compute and predict important electrical and dynamical properties of the device. We applied an electrical characterization and state-evolution procedure in order to capture the switching dynamics of a device and correlate the response with models for the drift diffusion of ionized dopants (vacancies) in the oxide film. The analysis revealed a notable property of nonlinear memristors: the energy required to switch a metal-oxide device decreases exponentially with increasing applied current.
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1 October 2009
Research Article|
October 09 2009
Switching dynamics in titanium dioxide memristive devices
Matthew D. Pickett;
Matthew D. Pickett
Information and Quantum Systems Laboratory,
Hewlett-Packard Laboratories
, 1501 Page Mill Road, Palo Alto, California 94304, USA
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Dmitri B. Strukov;
Dmitri B. Strukov
Information and Quantum Systems Laboratory,
Hewlett-Packard Laboratories
, 1501 Page Mill Road, Palo Alto, California 94304, USA
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Julien L. Borghetti;
Julien L. Borghetti
Information and Quantum Systems Laboratory,
Hewlett-Packard Laboratories
, 1501 Page Mill Road, Palo Alto, California 94304, USA
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J. Joshua Yang;
J. Joshua Yang
Information and Quantum Systems Laboratory,
Hewlett-Packard Laboratories
, 1501 Page Mill Road, Palo Alto, California 94304, USA
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Gregory S. Snider;
Gregory S. Snider
Information and Quantum Systems Laboratory,
Hewlett-Packard Laboratories
, 1501 Page Mill Road, Palo Alto, California 94304, USA
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Duncan R. Stewart;
Duncan R. Stewart
a)
Information and Quantum Systems Laboratory,
Hewlett-Packard Laboratories
, 1501 Page Mill Road, Palo Alto, California 94304, USA
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R. Stanley Williams
R. Stanley Williams
b)
Information and Quantum Systems Laboratory,
Hewlett-Packard Laboratories
, 1501 Page Mill Road, Palo Alto, California 94304, USA
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a)
Present address: National Research Council of Canada, 100 Sussex Dr., Ottawa, Ontario K1A 0R6, Canada.
b)
Electronic mail: stan.williams@hp.com.
J. Appl. Phys. 106, 074508 (2009)
Article history
Received:
July 01 2009
Accepted:
July 22 2009
Citation
Matthew D. Pickett, Dmitri B. Strukov, Julien L. Borghetti, J. Joshua Yang, Gregory S. Snider, Duncan R. Stewart, R. Stanley Williams; Switching dynamics in titanium dioxide memristive devices. J. Appl. Phys. 1 October 2009; 106 (7): 074508. https://doi.org/10.1063/1.3236506
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