The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 °C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 °C. Over the same temperature range, the ensemble NV−/NV0 ratio increased by a factor of ∼5, although this was accompanied by an overall decrease in the NV count.
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15 April 2011
Research Article|
April 22 2011
Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing
J. O. Orwa;
J. O. Orwa
a)
1School of Physics,
University of Melbourne
, Parkville, Victoria 3010, Australia
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C. Santori;
C. Santori
2HP Laboratories, Palo Alto, California 94304,
USA
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K. M. C. Fu;
K. M. C. Fu
2HP Laboratories, Palo Alto, California 94304,
USA
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B. Gibson;
B. Gibson
1School of Physics,
University of Melbourne
, Parkville, Victoria 3010, Australia
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D. Simpson;
D. Simpson
1School of Physics,
University of Melbourne
, Parkville, Victoria 3010, Australia
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I. Aharonovich;
I. Aharonovich
b)
1School of Physics,
University of Melbourne
, Parkville, Victoria 3010, Australia
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A. Stacey;
A. Stacey
1School of Physics,
University of Melbourne
, Parkville, Victoria 3010, Australia
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A. Cimmino;
A. Cimmino
1School of Physics,
University of Melbourne
, Parkville, Victoria 3010, Australia
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P. Balog;
P. Balog
3Element Six Ltd, Isle of Man IM99 6AQ,
British Isles
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M. Markham;
M. Markham
4Element Six Ltd, King’s Ride Park, Ascot SL5 8BP,
United Kingdom
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D. Twitchen;
D. Twitchen
4Element Six Ltd, King’s Ride Park, Ascot SL5 8BP,
United Kingdom
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A. D. Greentree;
A. D. Greentree
1School of Physics,
University of Melbourne
, Parkville, Victoria 3010, Australia
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R. G. Beausoleil;
R. G. Beausoleil
2HP Laboratories, Palo Alto, California 94304,
USA
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S. Prawer
S. Prawer
1School of Physics,
University of Melbourne
, Parkville, Victoria 3010, Australia
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a)
Author to whom correspondence should be addressed. Electronic mail: jorwa@unimelb.edu.au.
b)
Currently at School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, USA.
J. Appl. Phys. 109, 083530 (2011)
Article history
Received:
September 08 2010
Accepted:
March 09 2011
Citation
J. O. Orwa, C. Santori, K. M. C. Fu, B. Gibson, D. Simpson, I. Aharonovich, A. Stacey, A. Cimmino, P. Balog, M. Markham, D. Twitchen, A. D. Greentree, R. G. Beausoleil, S. Prawer; Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing. J. Appl. Phys. 15 April 2011; 109 (8): 083530. https://doi.org/10.1063/1.3573768
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