Abstract
A study was made of the growth conditions for the AgGa1–xInxS2 system and single crystals with the compositions x = 0.08, 0.2 and 0.6 were grown. The absorption coefficients and the refractive indices were measured in the range 0.55–11.5 μ. The wavelength dependences of the refractive indices were approximated by the Sellmeier polynomials. The phase matching diagrams were plotted for the oo-e frequency mixing process. A study was made of the influence of the percentage amounts of gallium and indium in these single crystals on the phase-matching conditions.