Click here to close this panel.
S A Akhmanov, M F Galyautdinov, Nikolai I Koroteev, G A Paĭtyan, I B Khaĭbullin, E I Shtyrkov and I L Shumaĭ
©, 1983 American Institute of Physics.
,
,
Citation S A Akhmanov et al 1983 Sov. J. Quantum Electron. 13 687
DOI 10.1070/QE1983v013n06ABEH004269
29 Total downloads
The process of recrystallization of the surface of GaAs during pulsed laser annealing was investigated using generation (by reflection from the surface) of the second harmonic of mode-locked radiation from another laser. The recrystallization time did not exceed 30–40 nsec. The results were accounted for by the melting theory of laser annealing.