Abstract
Raman scattering measurements on hydrogenated microcrystalline silicon prepared in a hydrogen plasma at deposition temperatures between approximately=65 and 400 degrees C are presented and discussed. The shifts of the crystalline (c) and 'amorphous-like' (a) components of the spectra to lower frequencies with decreasing crystallite size have been correlated with the lattice expansion and the finite dimensions of the crystallites in these films. The roles of hydrogen and of the compressive stress in the samples have been investigated by annealing experiments and a deposition of the samples under negative bias of the substrate, respectively. These results point to a probable mechanism of the crystalline-amorphous transition in silicon. The data presented allow an assignment of the amorphous-like feature in the Raman spectra to surface-like modes at grain boundaries of the crystallites. Strong arguments are given that suggest that the 480 cm-1 peak in the Raman spectra of X-ray amorphous silicon is of the same origin and is hence associated with some shearing modes of Si clusters rather than a broadened density of states. Results on the depolarisation ratio of Raman scattering in the microcrystalline and X-ray amorphous films are also presented and discussed.