Vibrations of defects in amorphous Si

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, , Citation R A Barrio and R J Elliott 1982 J. Phys. C: Solid State Phys. 15 4493 DOI 10.1088/0022-3719/15/21/013

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1 Dept. of Theoretical Phys., Oxford Univ., Oxford, UK

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0022-3719/15/21/4493

Abstract

Using the Bethe lattice as a simple model of amorphous Si, the effect on the vibrations of strong local defects such as substitutional atoms and broken bonds are calculated by Green function techniques. For finite concentrations of such impurities the coherent potential approximation can be adapted and used in the model. Results for amorphous alloys of Si-Ge are given.

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