The temperature dependence of the band-edge effective masses of InSb, InAs and GaAs as deduced from magnetophonon magnetoresistance measurements

Magnetophonon peaks are observed in the second derivative of the magnetoresistance of high purity samples of n-type InSb, InAs and GaAs over a wide range of temperatures. The temperature dependence of the band-edge effective mass in each material is deduced and compared with that predicted from the dilatational component of the change in band gap with temperature. In the case of InSb, the agreement is excellent but, with InAs and GaAs, the observed change is greater than that predicted although still less than that obtained by substitution of the change of optical energy gap with temperature.