Chemical vapour deposition of tin oxide films and their electrical properties

Transparent electrically conducting SnO₂ films were prepared by chemical vapour deposition technique. The films were obtained at various deposition temperature ranging from 350 to 500 degrees C by stannous chloride oxidation. The SnO₂ films thus produced have a conductivity of 50-700 (ohm cm)^-1, an n-type carrier concentration of 1*10¹⁹-6*10²⁰ cm^-3 and a Hall mobility of 7.8-31.2 V^-1 s^-1 depending on the deposition conditions. The studies on the variation of conductivity with temperature indicated two donor activation energies for the films.