Resistivity of polycrystalline zinc oxide films: current status and physical limit

Heavily doped zinc oxide films are used as transparent and conductive electrodes, especially in thin film solar cells. Despite decades of research on zinc oxide it is not yet clear what the lower limit of the resistivity of such films is. Therefore, the electrical parameters of zinc oxide films deposited by magnetron sputtering, metal organic chemical vapour deposition and pulsed laser ablation are reviewed and related to the deposition parameters. It is found that the lowest resistivities are in the range of 1.4 to 2×10^-4 Ω cm, independently of the deposition method. The highest reported Hall mobilities are about 60 cm² V^-1 s^-1. The thin film electrical data are compared with the corresponding values of single crystalline zinc oxide and with that of boron and phosphorous doped crystalline silicon. From this comparison it can be seen that the dependence of the Hall mobilities on the carrier concentration n are quite similar for silicon and zinc oxide. In the region n>5×10²⁰ cm^-3, which is most important for the application of zinc oxide as a transparent and conductive electrode, phosphorous doped silicon has a mobility only slightly higher than zinc oxide. The experimental data on the electron and hole mobilities in silicon as a function of the impurity concentration have been described by a fit function (Masetti et al 1983), which can also be applied with different fitting parameters to the available zinc oxide mobility data. A comparison of the experimental data with the well known ionized impurity scattering theories of Conwell-Weisskopf (1946) and Brooks-Herring-Dingle (1955) shows that these theories are not able to describe the data very well, even if the non-parabolic band structure is taken into account. As in the case of silicon, an additional reduction of the mobility also occurs for zinc oxide for concentrations n>5×10²⁰ cm^-3, which can be ascribed qualitatively to the clustering of charge carriers connected with increased scattering due to the Z^-2 dependence of the scattering cross section on the charge Z of the scattering centre. The presented review of the charge carrier transport in zinc oxide indicates that a physical limit due to ionized impurity scattering is reached for homogeneously doped layers. Due to the universal nature of this limitation it is suggested that it also applies to the other important materials indium-tin (ITO) and tin oxide. Experiments are proposed to overcome this limit.