Electron scattering in some II-IV-VI alloy semiconductors

Measurements of Hall mobility, thermoelectric power and transverse Nernst-Ettingshausen coefficients have been made on n- and p-type Sn_xPb_1-xTe, Cd_xPb_1-xTe, Mg_xPb_1-xTe, Cd_xPb_1-xSe and Mg_xPb_1-xSe alloys with 0less-than-or-eq, slantxless, similar0·1. The measurements covered the temperature range 100 to 400 K and the alloys had carrier concentrations within the range 5 × 10¹⁷ to 1 × 10¹⁹ cm⁻³. To explain the results several scattering mechanisms were considered and the non-parabolicity of the energy bands was taken into account. It was found that the charge carrier scattering in all the materials under the conditions of experimentation was predominantly by acoustical phonons.