Operation of dual gate MOS field effect transistors at 77 K and use in rf and video amplifiers

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, , Citation M J Lazarus et al 1971 J. Phys. E: Sci. Instrum. 4 58 DOI 10.1088/0022-3735/4/1/015

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1 Univ. Lancaster, UK

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0022-3735/4/1/58

Abstract

Measurements have been made with dual gate MOS field effect transistors when immersed in liquid nitrogen. It has been found that such devices are suitable for wideband and tuned rf amplifiers, with improved characteristics. Simple practical amplifier circuits and their characteristics are described.

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