Abstract
A direct fabrication system has been developed for semiconductor devices. It allows the recording of submicrometre patterns by an electron resist on a semiconductor wafer, using a fine electron beam controlled by a digital computer. The accelerating voltage, incident current and beam diameter are 15 kV, 100 pA and less than 0.2 mu m, respectively. The beam scans the unit field of 0.5 mm square, and an area of 25 mm square on the wafer can be irradiated by means of mechanical stepping and repeating. Four kinds of distortions (amplitude, rotation, trapezoid and shift) can be eliminated so that a registration accuracy of +or-0.2 mu m can be obtained over the whole area. Some microelectronic devices have been fabricated by using this system.