The Effect of Work Function Change on the Sputtering of Si+ from Oxidized Si Surfaces

Published under licence by IOP Publishing Ltd
, , Citation Ming L Yu 1983 Phys. Scr. 1983 67 DOI 10.1088/0031-8949/1983/T6/010

1402-4896/1983/T6/67

Abstract

The effect of Li deposition on the sputtering of Si+ from oxygenated Si surfaces has been studied. It is observed that at low oxygen coverages, the Si+ yield decreases exponentially with the Li induced decrease of the work function ϕ. With the formation of thermally grown silicon oxide on the surface, the Si+ yield deviates from the simple exponential dependence on ϕ. The Si+ yield becomes independent of ϕ for an appreciable range of ϕ in cases of heavier oxidation.

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10.1088/0031-8949/1983/T6/010