Abstract
The chief topic is the application of semiconductor counters to the analysis of the properties of nuclear radiations - not only in nuclear physics, but also in space physics and medicine. The criteria governing the choice of suitable semiconductor materials for counters, the factors limiting resolution (e.g. the role of trapping in large lithium-drifted counters), the transmutation doping method of compensation, the ion implantation technique of making thin contacts and irradiation damage effects in counters are discussed. Particular attention is given to the development and applications of lithium-drifted germanium, position-sensitive and avalanche multiplication counters. Particle channelling and the potentialities of the ion implantation technique for making electronic devices are treated separately. Some recent applications of high purity semiconductor devices to the study of basic irradiation damage mechanisms in semiconductor materials are also included.
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