The growth and structure of semiconducting thin films

In this review silicon and gallium arsenide are considered as typical examples of elemental and compound semiconductors respectively, and an account is given of the nucleation, growth and structure, both crystallographic and electrical, of autoepitaxial films of these materials. Some discussion of preparative techniques is first provided to illustrate the basic principles of thin film growth, but experimental details are not included. The use of modern methods of surface physics to assess the influence of the substrate surface on nucleation and subsequent growth behaviour is discussed, particularly with reference to results obtained using low energy electron diffraction. Auger electron spectroscopy and molecular beam techniques. Finally, the way in which studies of autoepitaxial growth have been extended to include growth on other substrates is considered.